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R N N-CHANNEL MOSFET JCS830 MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 4.5 A 500 V 1.5 32 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 17pF) dv/dt RoHS ORDER MESSAGE Order codes JCS830V-O-V-N-B JCS830R-O-R-N-B JCS830S-O-S-N-B JCS830B-O-B-N-B JCS830C-O-C-N-B JCS830F-O-F-N-B IPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS830V JCS830R JCS830S JCS830B JCS830C JCS830F Package Packaging Tube Tube Tube Tube Tube Tube 201007A 1/14 R JCS830 ABSOLUTE RATINGS (Tc=25) JCS830V/R JCS830F Value JCS830S/B/C 500 4.5 2.9 4.5* 2.9* Unit V A A Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energy note 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dtnote 3 18 18* A VGSS 30 V EAS 270 mJ IAR 4.5 A EAR 7.3 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25 -Derate above 25 TJTSTG 59 73 38 W 0.48 0.58 0.3 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201007A 2/14 R JCS830 Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 800 1050 76 17 100 22 pF pF pF VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V 500 V BVDSS/ ID=250A, referenced to 25 TJ VDS=500V,VGS=0V, TC=25 VDS=400V, IGSSF VDS=0V, TC=125 - 0.54 - V/ IDSS - - 10 100 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=2.25A VDS = 40V, ID=2.25Anote 4 - 1.16 1.5 gfs - 4.2 - S 201007A 3/14 R JCS830 td(on) tr td(off) tf Qg Qgs Qgd VDS =400V , ID=4.5A VGS =10V note 45 VDD=250V,ID=4.5A,RG=25 note 45 15 40 40 90 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 85 180 45 100 32 3.7 15 44 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 4.5 A ISM - - 18 A VGS=0V, IS=4.5A - - 1.4 V trr Qrr VGS=0V, IS=4.5A dIF/dt=100A/s (note 4) - 305 2.6 - ns C THERMAL CHARACTERISTIC Max JCS830V/R JCS830S/B/C JCS830F 2.05 110 1.71 62.5 3.31 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=24mH, IAS=4.5A, VDD=50V, RG=25 , TJ=25 3ISD 4.5A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W Notes: 1Pulse width limited by maximum junction temperature 2L=24mH, IAS=4.5A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 4.5A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature 201007A 4/14 R JCS830 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 10 25 ID [A] ID [A] 150 1 1 Notes 1. 250s pulse test 2. TC=25 0.1 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 1.9 1.8 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RDS (on ) [ ] I DR [A] 1.7 1.6 1.5 1.4 1.3 1.2 1.1 VGS=10V 25 VGS=20V 1 150 Note j=25 T 0.1 0.4 0.6 0.8 1.0 Notes 1. 250s pulse test 2. VGS=0V 1.2 1.4 1.6 0 2 4 6 8 ID [A] V SD [V] Capacitance Characteristics 12 Gate Charge Characteristics VDS=400V 10 VGS Gate Source Voltage[V] VDS=250V VDS=100V 8 6 4 2 0 0 4 8 12 16 20 24 28 32 36 Qg Toltal Gate Charge [nC] 201007A 5/14 R JCS830 On-Resistance Variation vs. Temperature 3.0 2.5 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 BV DS (normalized) 1.1 R D (on ) (Normalizde) 2.0 1.0 1.5 1.0 0.9 Notes 1. VGS=0V 2. ID=250A -50 0 50 100 150 0.5 Notes 1. VGS=10V 2. ID=2.25A -50 0 50 100 150 0.8 0.0 T j [ ] T j [ ] Maximum Safe Operating Area For JCS830V/R/S/B/C Maximum Safe Operating Area For JCS830F Maximum Drain Current vs. Case Temperature 201007A 6/14 R JCS830 Transient Thermal Response Curve For JCS830V/R ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS830S/B/C Transient Thermal Response Curve For JCS830F 201007A 7/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA IPAK 201007A 8/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA DPAK 201007A 9/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA TO-262 201007A 10/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA TO-263 201007A 11/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA TO-220C 201007A 12/14 R JCS830 Unitmm PACKAGE MECHANICAL DATA TO-220MF 201007A 13/14 R JCS830 NOTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201007A 14/14 |
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